الصفحة الرئيسية / أخبار /

Highly doped p-type 3C–SiC on 6H–SiC substrates

أخبار

الاقسام

المنتجات الموصى بها

أحدث الأخبار

Highly doped p-type 3C–SiC on 6H–SiC substrates

2019-11-11

Highly doped p-3C–SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ~EV + 0.25 eV and at EV + 0.06–0.07 eV exist in the samples studied. A conclusion is reached that layers of this kind can be used as p-emitters in 3C–SiC devices.


Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,

send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

اتصل بنا

إذا كنت ترغب اقتباس أو مزيد من المعلومات حول منتجاتنا، يرجى ترك لنا رسالة، وسوف الرد عليك في أقرب وقت ممكن.